3V3 STM32 I/O drive radioshack IRF510 MOSFET using Orcad Capture CIS simulator

              I still being lazy to identify the difference between P MOS and N MOS, J FET is even more impossible for me to identify. Well, that does not stop me to play with it. The Orcad capture pretty much helps me. The simulation model I use is not the radioshack one but ON Semiconductor one, but the model no is almost the same IRF510.

            I simply use a NPN BJT() to use as a switch to control the ON/OFF of MOS. Before doing this, SUPPOSE I use the I/O port to control the NPN BJT PN2221 (Because now is just simulation). Use this MOSFET will need to be carefully. If you see the datasheet before, it is very detailed two pages about the power. voltage and current...temperature. The term Continuous Source-Drain Diode Current simply says that the max continuous current could not exceed 5.6A and Pulsed diode Forward Current cannot exceed 20A. Otherwise the MOSFET will probably cracked due to high temperature..          
       
          Here is my simulation of the MOSFET driver:

         And waveform is always fake like hell...in matlab you may create fake noise, in capture you cannot even did like that.

And yes that is all of it i got.